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AO4801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Standard Product AO4801 is Pb-free (meets ROHS & Sony 259 specifications). AO4801L is a Green Product ordering option. AO4801 and AO4801L are electrically identical.
Features
VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 49m (VGS = -10V) RDS(ON) < 64m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V)
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1 G1
D1
D2
SOIC-8
G2 S1 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation
A
Maximum -30 12 -5 -4.2 -30 2 1.44 -55 to 150
Units V V A
TA=25C TA=70C ID IDM PD TJ, TSTG
TA=70C
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 48 74 35
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4801
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, I D=-4A VGS=-2.5V, I D=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5A 7 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 54 80 11 -0.75 -1 -3 952 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 103 77 5.9 9.5 VGS=-4.5V, VDS=-15V, ID=-5A 2 3.1 12 VGS=-10V, VDS=-15V, RL=3, RGEN=6 IF=-5A, dI/dt=100A/s 4 37 12 21 13 -0.7 -25 42.5 49 74 64 120 -1 Min -30 -1 -5 100 -1.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 120 100 RDS(ON) (m) 80 60 40 VGS=-10V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 RDS(ON) (m) 130 110 90 70 50 30 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) ID=-2A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-2.5V VGS=-4.5V Normalized On-Resistance 1.6 -2.5V -10V -4.5V -3V -ID (A) -ID(A) 6 4 2 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 125C 10 VDS=-5V 8
VGS=-2V
25C
1.4
ID=-5A VGS=-4.5V VGS=-10V
1.2
VGS=-2.5V ID=-2A
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=-15V ID=-5A Capacitance (pF) 1200 1000 800 600 400 Coss Crss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s Power (W) 100s 1ms 10ms 30
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0
1s 10s DC
10
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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